HREM study of atomic image of single crystal indium phosphide
Identifieur interne : 000489 ( Main/Exploration ); précédent : 000488; suivant : 000490HREM study of atomic image of single crystal indium phosphide
Auteurs : RBID : ISTEX:10853_1989_Article_BF02385403.pdfAbstract
This paper reports some experimental results of high resolution electron microscopy (HREM) studies on single crystal indium phosphide (InP) along the [0 0 1] zone axis. Using 400 kV electrons, with defocus value about 46.0 nm, the optimum conditions for structure imaging for both In and P atoms were found to be about 26.0 nm. Decreasing the specimen thickness to about 15.0 nm, only atomic images of P remain; increasing the specimen thickness to about 37.0 nm, only atomic images of In remain. These experimental results are in good agreement with computer simulation. It was also observed that for bent crystal deviating from the [0 0 1] axis, the bright spots, corresponding to In and P atomic columns in high resolution structure imaging, are elongated at a deviation angle equal to 0.18 degrees, the two bright spots are connected together along the direction of the [1 1 0] zone axis. This phenomenon is also confirmed by computer simulation. In the experiment, a pair of dislocation waves were observed with apparent Burgers vectors of$$\tfrac{1}{2}[0 1 0]$$ and$$\tfrac{1}{2}[0 \bar 1 0]$$ while the actual Burgers vectors may be$$\tfrac{1}{2}[0 11]$$ and$$\tfrac{1}{2}[0 \bar 1\bar 1]$$.
DOI: 10.1007/BF02385403
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<record><TEI><teiHeader><fileDesc><titleStmt><title>HREM study of atomic image of single crystal indium phosphide</title><author><name>Wang Lu Chun</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing</wicri:regionArea><wicri:noRegion>Nanjing</wicri:noRegion></affiliation></author><author><name>Feng Duan</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing</wicri:regionArea><wicri:noRegion>Nanjing</wicri:noRegion></affiliation></author><author><name>Tan Ke Min</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing</wicri:regionArea><wicri:noRegion>Nanjing</wicri:noRegion></affiliation></author><author><name>Chen Jun</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing</wicri:regionArea><wicri:noRegion>Nanjing</wicri:noRegion></affiliation></author><author><name>Yian Yong</name><affiliation wicri:level="1"><mods:affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</mods:affiliation><country xml:lang="fr">République populaire de Chine</country><wicri:regionArea>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing</wicri:regionArea><wicri:noRegion>Nanjing</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:10853_1989_Article_BF02385403.pdf</idno><date when="1989">1989</date><idno type="doi">10.1007/BF02385403</idno><idno type="wicri:Area/Main/Corpus">000281</idno><idno type="wicri:Area/Main/Curation">000281</idno><idno type="wicri:Area/Main/Exploration">000489</idno></publicationStmt></fileDesc><profileDesc><textClass></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">This paper reports some experimental results of high resolution electron microscopy (HREM) studies on single crystal indium phosphide (InP) along the [0 0 1] zone axis. Using 400 kV electrons, with defocus value about 46.0 nm, the optimum conditions for structure imaging for both In and P atoms were found to be about 26.0 nm. Decreasing the specimen thickness to about 15.0 nm, only atomic images of P remain; increasing the specimen thickness to about 37.0 nm, only atomic images of In remain. These experimental results are in good agreement with computer simulation. It was also observed that for bent crystal deviating from the [0 0 1] axis, the bright spots, corresponding to In and P atomic columns in high resolution structure imaging, are elongated at a deviation angle equal to 0.18 degrees, the two bright spots are connected together along the direction of the [1 1 0] zone axis. This phenomenon is also confirmed by computer simulation. In the experiment, a pair of dislocation waves were observed with apparent Burgers vectors of$$\tfrac{1}{2}[0 1 0]$$ and$$\tfrac{1}{2}[0 \bar 1 0]$$ while the actual Burgers vectors may be$$\tfrac{1}{2}[0 11]$$ and$$\tfrac{1}{2}[0 \bar 1\bar 1]$$.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="30f6d8dc5865fbc7206ac241f2671e9206e16ca9"><titleInfo lang="eng"><title>HREM study of atomic image of single crystal indium phosphide</title></titleInfo><name type="personal"><namePart type="given">Wang Lu</namePart><namePart type="family">Chun</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</affiliation></name><name type="personal"><namePart type="given">Feng</namePart><namePart type="family">Duan</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</affiliation></name><name type="personal"><namePart type="given">Tan Ke</namePart><namePart type="family">Min</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</affiliation></name><name type="personal"><namePart type="given">Chen</namePart><namePart type="family">Jun</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</affiliation></name><name type="personal"><namePart type="given">Yian</namePart><namePart type="family">Yong</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Department of Physics and Institute of Solid State Physics, Nanjing University, 210008, Nanjing, People's Republic of China</affiliation></name><typeOfResource>text</typeOfResource><genre>Original Paper</genre><originInfo><publisher>Kluwer Academic Publishers, Dordrecht</publisher><dateCreated encoding="w3cdtf">1988-05-17</dateCreated><dateCaptured encoding="w3cdtf">1988-09-12</dateCaptured><dateValid encoding="w3cdtf">2006-03-27</dateValid><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">This paper reports some experimental results of high resolution electron microscopy (HREM) studies on single crystal indium phosphide (InP) along the [0 0 1] zone axis. Using 400 kV electrons, with defocus value about 46.0 nm, the optimum conditions for structure imaging for both In and P atoms were found to be about 26.0 nm. Decreasing the specimen thickness to about 15.0 nm, only atomic images of P remain; increasing the specimen thickness to about 37.0 nm, only atomic images of In remain. These experimental results are in good agreement with computer simulation. It was also observed that for bent crystal deviating from the [0 0 1] axis, the bright spots, corresponding to In and P atomic columns in high resolution structure imaging, are elongated at a deviation angle equal to 0.18 degrees, the two bright spots are connected together along the direction of the [1 1 0] zone axis. This phenomenon is also confirmed by computer simulation. In the experiment, a pair of dislocation waves were observed with apparent Burgers vectors of$$\tfrac{1}{2}[0 1 0]$$ and$$\tfrac{1}{2}[0 \bar 1 0]$$ while the actual Burgers vectors may be$$\tfrac{1}{2}[0 11]$$ and$$\tfrac{1}{2}[0 \bar 1\bar 1]$$.</abstract><relatedItem type="series"><titleInfo type="abbreviated"><title>J Mater Sci</title></titleInfo><titleInfo><title>Journal of Materials Science</title><partNumber>Year: 1989</partNumber><partNumber>Volume: 24</partNumber><partNumber>Number: 6</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1989-06-01</dateIssued><copyrightDate encoding="w3cdtf">1989</copyrightDate></originInfo><subject usage="primary"><topic>Chemistry</topic><topic>Polymer Sciences</topic><topic>Materials Science</topic><topic>Characterization and Evaluation Materials</topic><topic>Mechanics</topic><topic>Continuum Mechanics and Mechanics of Materials</topic><topic>Crystallography</topic></subject><identifier type="issn">0022-2461</identifier><identifier type="issn">Electronic: 1573-4803</identifier><identifier type="matrixNumber">10853</identifier><identifier type="local">IssueArticleCount: 58</identifier><recordInfo><recordOrigin>Chapman and Hall Ltd., 1989</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF02385403</identifier><identifier type="matrixNumber">Art9</identifier><identifier type="local">BF02385403</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>1941</start><end>1945</end></extent></part><recordInfo><recordOrigin>Chapman and Hall Ltd., 1989</recordOrigin><recordIdentifier>10853_1989_Article_BF02385403.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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